IBM, its Research Alliance partners GLOBALFOUNDRIES and Samsung, and equipment suppliers have developed an industry-first process to build silicon nanosheet transistors that will enable 5 nanometer (nm) chips.
In less than two years since developing a 7nm test node chip with 20 billion transistors, scientists have paved the way for 30 billion switches on a fingernail-sized chip, said IBM in a press statement.
The details of the process will be presented at the 2017 Symposia on VLSI Technology and Circuits conference in Kyoto, Japan.
The new transistor, claimed the company, will see a resulting increase in performance, which in turn will help accelerate cognitive computing, the Internet of Things (IoT), and other data-intensive applications delivered in the Cloud.
This article was 1st published on our sister Site, The Internet Of All Things.
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